CVD-SnS2单层薄膜
产品介绍
DeScription:
This product contains full area coverage SnS2 monolayers on c-cut sapphire substrates. Sample size measures 1cm in size d the entire sample surface contains monolayer thick SnS2 sheet. Synthesized full area coverage monolayer SnS2 is highly crystalline.
Growth method: Our compy synthesizes these monolayers using chemical vapor deposition (CVD) using highest purity (6N) gases d precursors in semiconductor grade facilities to produce crystalline d large domain size samples (1-50um). This is unlike commonly used MOCVD process wherein defects are very very large d domain sizes are small (10nm-500nm).
Sample Properties
| Sample size | 1cm x 1cm square shaped |
| Substrate type | Sapphire c-cut (0001) |
| Coverage | Full monolayer coverage |
| Electrical properties | 2.2 eV Indirect Gap Semiconductor |
| Crystal structure | Hexagonal Phase |
| Unit cell parameters |
a = b = 0.362, c = 0.590 nm, α = β = 90°, γ = 120° |
| Production method | Low Pressure Chemical Vapor Deposition (LPCVD) |
| Characterization methods | Ram, gle resolved Ram spectroscopy, photoluminescence, absorption spectroscopy TEM, EDS |
| 参数信息 | |
|---|---|
| 外观状态： | 固体或粉末 |
| 质量指标： | 95%+ |
| 溶解条件： | 有机溶剂/水 |
| CAS号： | N/A |
| 分子量： | N/A |
| 储存条件： | -20℃避光保存 |
| 储存时间： | 1年 |
| 运输条件： | 室温2周 |
| 生产厂家： | 上海金畔生物科技有限公司 |