· Film: SiC Epi film with 3C structure grown by PECVD · Thickness: 1.26 micron +/- 10% (c be grown up to 20 micron th; the price would be increased with the requested film thickness) · Orientation: 3C SiC (100) · Surface: CMP ( film chemical mechical polished ) on both sides with Ra < 5 Angstrom · Target doping level: < 1.0E16 /cc · Type d dopt: N type, Undoped · Surface defects density (microscopic inspection of crystallites or other macro-defects) <= 3E3cm^2 · Silicon substrate: · Size: 10mm x 10mm x 0.525 mm thickness · Orientation: (100) · Type: P type / B doped ( N type is available as well) · Resistivity: 1- 5 ohm.cm · Polish: one side polished

参数信息
外观状态：	固体或粉末
质量指标：	95%+
溶解条件：	有机溶剂/水
CAS号：	N/A
分子量：	N/A
储存条件：	-20℃避光保存
储存时间：	1年
运输条件：	室温2周
生产厂家：	上海金畔生物科技有限公司