CVD-WSe2单层薄膜

CVD-WSe2单层薄膜

CVD-WSe2单层薄膜,1cm x 1cm square shaped

产品介绍

Description:

This product contains full area coverage WSe2 monolayers on c-cut sapphire substrates. Sample size measures 1cm in size d the entire sample surface contains monolayer thick WSe2 sheet. Synthesized full area coverage monolayer WSe2 is highly luminescent d Ram spectroscopy studies also confirm the monolayer thickness (please see the technical specifications)

Growth method: Our compy synthesizes these monolayers using chemical vapor deposition (CVD) using highest purity (6N) gases d precursors in semiconductor grade facilities to produce crystalline d large domain size samples (1-50um). This is unlike commonly used MOCVD process wherein defects are very very large d domain sizes are small (10nm-500nm). Our samples are always highly luminescent d highly crystallized

Sample Properties

Sample size 1cm x 1cm square shaped
Substrate type (0001) c-cut sapphire
Coverage Full coverage monolayer
Electrical properties 1.62 eV Direct Bdgap Semiconductor
Crystal structure Hexagonal Phase
Unit cell parameters a = b = 0.327 nm, c = 1.295 nm, α = β = 90°, γ = 120°
Production method Low pressure Chemical Vapor Deposition (LPCVD)
Characterization methods Ram, photoluminescence, TEM, EDS
参数信息
外观状态: 固体或粉末
质量指标: 95%+
溶解条件: 有机溶剂/水
CAS号: N/A
分子量: N/A
储存条件: -20℃避光保存
储存时间: 1年
运输条件: 室温2周
生产厂家: 上海金畔生物科技有限公司