CVD-Sb2Te3 单层薄膜

CVD-Sb2Te3 单层薄膜

CVD-二维类石墨烯产品-CVD-Sb2Te3 单层薄膜,1cm x 1cm square shaped

产品介绍

样品照片:

CVD-Sb2Te3 单层薄膜

Description:

 

Chemical vapor deposited (CVD) Sb2Te3 films have been synthesized at our facilities in 2019. Bulk Sb2Te3 crystal is a topological insulator which crystallizes in orthorhombic space group. CVD Sb2Te3 samples measure 1x1cm2 in size d reaches to full coverage. By default it is grown onto souble side polished sapphire, but c also be trsferred to SiO2/Si substrates on demd. 

 

The characteristics of CVD Sb2Te3 

 

Sample size 1cm x 1cm square shaped
Substrate type  (0001) c-cut sapphire (C be trsferred onto y substrate)
Coverage Full coverage
Electrical properties Topological insulator (bulk form)
Crystal structure Trigonal phase
Unit cell parameters a=b=0.427 nm, c=3.052 nm, α=β=90°, γ=120°
Production method Chemical vapor deposition
Characterization methods Ram, photoluminescence, TEM, EDS
参数信息
外观状态: 固体或粉末
质量指标: 95%+
溶解条件: 有机溶剂/水
CAS号: N/A
分子量: N/A
储存条件: -20℃避光保存
储存时间: 1年
运输条件: 室温2周
生产厂家: 上海金畔生物科技有限公司