CVD-MoSe2 单层薄膜

CVD-MoSe2 单层薄膜

CVD-二维类石墨烯产品-CVD-MoSe2 单层薄膜

产品介绍

产品照片:

CVD-MoSe2 单层薄膜

This product contains MoSe2 monolayers on c-cut sapphire substrates. Please note that these MoSe2 monolayers do not reach full area coverage on sapphire or SiO2/Si samples. Sample size measures 1cm in size d the entire sample surface contains monolayer thick MoSe2 sheet. Synthesized monolayer MoSe2 is highly luminescent d Ram spectroscopy studies also confirm the monolayer thickness (please see the technical specifications), however few-layer regions are also ticipated to be observed.

Growth method: Our compy synthesizes these monolayers using chemical vapor deposition (CVD) using highest purity (6N) gases d precursors in semiconductor grade facilities to produce crystalline d large domain size samples (1-50um). This is unlike commonly used MOCVD process wherein defects are very very large d domain sizes are small (10nm-500nm). Our samples are always highly luminescent d highly crystallized

Sample Properties

Sample size 1cm x 1cm square shaped
Substrate type (0001) c-cut sapphire
Coverage Does not reach full area coverage
Electrical properties 1.58 eV Direct Bdgap Semiconductor
Crystal structure Hexagonal Phase
Unit cell parameters a = b = 0.327 nm, c = 1.295 nm, α = β = 90°, γ = 120°
Production method Low pressure Chemical Vapor Deposition (LPCVD)
Characterization methods Ram, photoluminescence, TEM, EDS

 

参数信息
外观状态: 固体或粉末
质量指标: 95%+
溶解条件: 有机溶剂/水
CAS号: N/A
分子量: N/A
储存条件: -20℃避光保存
储存时间: 1年
运输条件: 室温2周
生产厂家: 上海金畔生物科技有限公司