CVD-ReSe2单层薄膜

CVD-ReSe2单层薄膜

CVD-ReSe2单层薄膜,1cm x 1cm square shaped

产品介绍

Description:

This product contains full area coverage ReSe2 monolayers on c-cut sapphire substrates. Sample size measures 1cm in size d the entire sample surface contains monolayer thick ReSe2 sheet. Synthesized full area coverage monolayer ReSe2 is highly crystalline, some regions also display significt crystalline isotropy.

Growth method: Our compy synthesizes these monolayers using chemical vapor deposition (CVD) using highest purity (6N) gases d precursors in semiconductor grade facilities to produce crystalline d large domain size samples (1-50um). This is unlike commonly used MOCVD process wherein defects are very very large d domain sizes are small (10nm-500nm). 

Sample Properties

Sample size 1cm x 1cm square shaped
Substrate type Sapphire c-cut (0001)
Coverage Full monolayer coverage
Electrical properties 1.45 eV Anisotropic Semiconductor (Indirect Bdgap)
Crystal structure Distorted Tetragonal Phase (1T’)
Unit cell parameters

a = 0.656 nm, b = 0.672 nm, c = 0.674 nm,

α = 91.74°, β = 105°, γ = 119°

Production method Atmospheric Pressure Chemical Vapor Deposition (APCVD)
Characterization methods Ram, gle resolved Ram spectroscopy, photoluminescence, absorption s
参数信息
外观状态: 固体或粉末
质量指标: 95%+
溶解条件: 有机溶剂/水
CAS号: N/A
分子量: N/A
储存条件: -20℃避光保存
储存时间: 1年
运输条件: 室温2周
生产厂家: 上海金畔生物科技有限公司