CVD-WS2多层薄膜

CVD-WS2多层薄膜

CVD-WS2多层薄膜 1cm*1cm

产品介绍

样品照片:

CVD-WS2多层薄膜

CVD-WS2多层薄膜

Ram:

CVD-WS2多层薄膜

This product contains full area coverage WS2 few-layers that measure ~5 layers in thickness. Sheets are grown through chemical vapor deposition technique onto c-cut double side polished sapphire substrates, but layers c be trsferred onto other substrates by polymer assisted trsfer technique on demd (please select from the drop down menu). The sample measures 1cm2 in size d the entire sample surface contains few-layer thick WS2 sheet. Grown few-layers are high-crystalline as evidenced by HR-TEM, Ram, EDS, d XRD measurements. Please see the datasets in the product images.

Growth method: Our compy synthesizes these few layers using chemical vapor deposition (CVD) using highest purity (6N) gases d precursors in semiconductor grade facilities to produce crystalline d large domain size samples (1-50um). Other sources typically use MOCVD or sputtering process wherein defects are very large, domain sizes are small (10nm-500nm), d products are non-layered. Our samples are always highly crystallized, high purity, d perfectly layered.

Sample Properties

Sample size 1cm x 1cm square shaped
Substrate type (0001) c-cut sapphire
Coverage Full coverage few-layer thick WS2
Electrical properties Indirect gap semiconductor
Crystal structure Hexagonal Phase
Unit cell parameters a = b = 0.312 nm, c = 1.230 nm, α = β = 90, γ = 120°
Production method Chemical Vapor Deposition (CVD)
Characterization methods Ram, photoluminescence, TEM, EDS

参数信息
外观状态: 固体或粉末
质量指标: 95%+
溶解条件: 有机溶剂/水
CAS号: N/A
分子量: N/A
储存条件: -20℃避光保存
储存时间: 1年
运输条件: 室温2周
生产厂家: 上海金畔生物科技有限公司